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Communication Dans Un Congrès Année : 2015

Contribution of molecular simulation to the characterization of porous low-k materials

Résumé

This study aims to investigate the modified surface porosity of SiOCH low-k porous thin films using statistical mechanics molecular simulations and ellipso-porosimetry. The thin films are modified by plasma etching and wet cleaning. Numerical simulations of solvent adsorption on surfaces highlighted solvent affinity variations depending on chemical surface compositions.
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Dates et versions

hal-01737151 , version 1 (19-03-2018)

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Lucile Broussous, Matthieu J. Lépinay, Benoit Coasne, Christophe Licitra, V. Rouessac, et al.. Contribution of molecular simulation to the characterization of porous low-k materials. 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), May 2015, Grenoble, France. pp.123-126, ⟨10.1109/IITC-MAM.2015.7325636⟩. ⟨hal-01737151⟩
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