Contribution of molecular simulation to the characterization of porous low-k materials
Résumé
This study aims to investigate the modified surface porosity of SiOCH low-k porous thin films using statistical mechanics molecular simulations and ellipso-porosimetry. The thin films are modified by plasma etching and wet cleaning. Numerical simulations of solvent adsorption on surfaces highlighted solvent affinity variations depending on chemical surface compositions.
Mots clés
ellipsometry
molecular dynamics method
plasma materials processing
porosity
porous materials
sputter etching
statistical mechanics
surface cleaning
surface composition
thin films
SiOCH
chemical surface compositions
ellipso-porosimetry
low-k porous thin films
numerical simulations
plasma etching
solvent adsorption
solvent affinity
statistical mechanics molecular simulations
surface porosity
wet cleaning
Adsorption
Chemicals
Methanol
Probes
Silicon compounds
Solvents
Surface treatment