A new process enabling the synthesis of ZnO and Al-doped ZnO nanowires (NWs) for photosensing applications is reported. By combining atomic layer deposition (ALD) for the seed layer preparation and electrodeposition for the NWs growth, high quality ZnO nanomaterials were prepared and tested as UV sensors. The obtained NWs are grown as arrays perpendicular to the substrate surface and present diameters between 70 and 130 nm depending on the Al doping, as seen from scanning electron microscopy (SEM) studies. Their hexagonal microstructure has been determined using X-ray diffraction and Raman spectroscopy. An excellent performance in UV sensing has been observed for the ZnO NWs 2 with low Al doping, and a maximal photoresponse current of 11.1 mA has been measured. In addition, initial studies on the stability have shown that the NWs photoresponse currents are stable, even after 10 UV on/off cycles.