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Communication dans un congrès
Low pump irradiance to modulate THz waves driven by photogenerated carriers in an InAs slab
Abstract : We theoretically and experimentally study the THz electromagnetic properties of an undoped-InAs slab whose permittivity is optically modified by a photo-generation process. The modulation of the permittivity is calculated by solving the ambipolar rate equation for the free carriers. Experiment results demonstrate that InAs is a promising semiconductor to manufacture fast and efficiently on-chip THz components. We show a high modulation of the THz transmission up to 100% from 0.75 to 1.1THz at very low pump fluence in the continuous wave regime. We also demonstrate a high-speed transmission modulation rate up to the MHz range with a modulated pump.
Littérature citée [4 références]
https://hal.umontpellier.fr/hal-02356630
Contributeur : Thierry Taliercio <>
Soumis le : vendredi 8 novembre 2019 - 19:48:22
Dernière modification le : jeudi 14 novembre 2019 - 01:24:48
Archivage à long terme le : : lundi 10 février 2020 - 03:39:14
Contributeur : Thierry Taliercio <>
Soumis le : vendredi 8 novembre 2019 - 19:48:22
Dernière modification le : jeudi 14 novembre 2019 - 01:24:48
Archivage à long terme le : : lundi 10 février 2020 - 03:39:14
Fichier
irmmw-thz2019.pdf
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