Low pump irradiance to modulate THz waves driven by photogenerated carriers in an InAs slab

Abstract : We theoretically and experimentally study the THz electromagnetic properties of an undoped-InAs slab whose permittivity is optically modified by a photo-generation process. The modulation of the permittivity is calculated by solving the ambipolar rate equation for the free carriers. Experiment results demonstrate that InAs is a promising semiconductor to manufacture fast and efficiently on-chip THz components. We show a high modulation of the THz transmission up to 100% from 0.75 to 1.1THz at very low pump fluence in the continuous wave regime. We also demonstrate a high-speed transmission modulation rate up to the MHz range with a modulated pump.
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Soumis le : vendredi 8 novembre 2019 - 19:48:22
Dernière modification le : jeudi 14 novembre 2019 - 01:24:48

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  • HAL Id : hal-02356630, version 1

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Eduardo Alvear-Cabezón, Stéphane Blin, Philippe Nouvel, F. Gonzalez-Posada, Rafik Smaali, et al.. Low pump irradiance to modulate THz waves driven by photogenerated carriers in an InAs slab. 44th International Conference on Infrared, Millimeter, and Terahertz Waves, Sep 2019, Paris, France. ⟨hal-02356630⟩

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