Communication Dans Un Congrès Année : 2019

Photo-generated carriers in InAs slab at THz frequencies induced by a continuous wave low irradiance

Résumé

We theoretically and experimentally study the THz electromagnetic properties of photo-generated carriers in an undoped-InAs slab. We use an optical pump to modify the permittivity. These modifications are calculated by solving the ambipolar rate equation for the photo-carriers. Experiments demonstrate that InAs is a promising semiconductor that can be used to manufacture fast and efficient on-chip THz components. We show a high modulation of the THz transmission up to 100% from 0.75 to 1 THz at very low pump fluence in the continuous wave regime.

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Sciences de l'ingénieur [physics]
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Stéphane Blin  : Connectez-vous pour contacter le contributeur

https://hal.umontpellier.fr/hal-04283803

Soumis le : mardi 14 novembre 2023-09:23:22

Dernière modification le : vendredi 3 mai 2024-14:09:11

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Dates et versions

hal-04283803 , version 1 (14-11-2023)

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  • HAL Id : hal-04283803 , version 1

Citer

E. Alvear-Cabezón, R. Smaali, S. Blin, P. Nouvel, F. Gonzalez-Posada, et al.. Photo-generated carriers in InAs slab at THz frequencies induced by a continuous wave low irradiance. French-German THz Conference, Apr 2019, Kaiserlautern, Germany. ⟨hal-04283803⟩

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PRES_CLERMONT CNRS IES INSTITUT_PASCAL MIPS UNIV-MONTPELLIER CLERMONT-AUVERGNE-INP
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