0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation - Université de Montpellier
Communication Dans Un Congrès Année : 2023

0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation

J. Hesler
  • Fonction : Auteur
T. Reck
  • Fonction : Auteur

Résumé

We present an integrated amplitude modulator operating in the 0.750-1.1-THz frequency range. This component offers typically a modulation depth of 10 dB, a modulation bandwidth of 40 MHz and insertion losses of 6 dB. The modulator is based on the optical pumping of an InAs layer deposited on a semiconductor substrate, using moderate pumping optical power of less than 600 mW at a wavelength of 1 µm. Such performances are possible thanks to its integration within a WR1.0 waveguide.
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Dates et versions

hal-04282977 , version 1 (13-11-2023)

Identifiants

Citer

J. Guise, H. Ratovo, M. Thual, J. Hesler, T. Reck, et al.. 0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation. 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2023, Montreal, Canada. pp.1-2, ⟨10.1109/IRMMW-THz57677.2023.10299360⟩. ⟨hal-04282977⟩
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