0.75–1.1-THz Waveguide-Integrated Amplitude Modulator based on InAs photo-excitation
Résumé
We present an integrated amplitude modulator operating in the 0.750-1.1-THz frequency range. This component offers typically a modulation depth of 10 dB, a modulation bandwidth of 40 MHz and insertion losses of 6 dB. The modulator is based on the optical pumping of an InAs layer deposited on a semiconductor substrate, using moderate pumping optical power of less than 600 mW at a wavelength of 1 µm. Such performances are possible thanks to its integration within a WR1.0 waveguide.
Domaines
Sciences de l'ingénieur [physics]
Fichier principal
2023071087_Abstract.pdf (234.78 Ko)
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2023071087_Abstract (1).pdf (234.78 Ko)
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