Large specific surface area in highly crystalline Silicon Carbide (SiC) from templated poymeric precursors - Université de Montpellier
Communication Dans Un Congrès Année : 2021

Large specific surface area in highly crystalline Silicon Carbide (SiC) from templated poymeric precursors

Julien Cambedouzou

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Chimie
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Dates et versions

hal-03766675 , version 1 (01-09-2022)

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  • HAL Id : hal-03766675 , version 1

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Julien Cambedouzou. Large specific surface area in highly crystalline Silicon Carbide (SiC) from templated poymeric precursors. 45th International Conference and exposition on Advanced Ceramics & Composites (virtual event), 2021, Nagoya, Japan. ⟨hal-03766675⟩
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