Ouvrages Année : 2010

Field effect transistors based on catalyst-free grown 3C-SiC nanowires. Materials Science Forum 2010, 645-648, 1235-1238

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Chimie
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hal-01710866 , version 1 (16-02-2018)

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  • HAL Id : hal-01710866 , version 1

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K Rogdakis, E. Bano, Laurent Montès, Mikhael Bechelany, David Cornu, et al. (Dir.). Field effect transistors based on catalyst-free grown 3C-SiC nanowires. Materials Science Forum 2010, 645-648, 1235-1238. 2010. ⟨hal-01710866⟩
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