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Ridge polariton laser: different from a semiconductor edge-emitting laser

Abstract : We experimentally demonstrate the difference between a ridge polariton laser, and a conventional edge-emitting ridge laser operating under electron-hole population inversion. The horizontal laser cavities are 20 − 60 µm long GaN etched ridge structures with vertical Bragg reflectors. We investigate the laser threshold under optical pumping and assess quantitatively the effect of a varying optically-pumped length. The laser effect is achieved for an exciton reservoir length of just 15% of the cavity length, which would not be possible in a conventional ridge laser, with an inversion-less polaritonic gain about 10 times larger than in equivalent GaN lasers. The modelling of the cavity free spectral range demonstrates the polaritonic nature of the modes.
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Preprints, Working Papers, ...
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Contributor : Hassen Souissi Connect in order to contact the contributor
Submitted on : Tuesday, January 11, 2022 - 4:35:29 PM
Last modification on : Wednesday, May 11, 2022 - 3:24:03 AM


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  • HAL Id : hal-03521600, version 1
  • ARXIV : 2201.04348


H Souissi, M Gromovyi, T Gueye, C Brimont, L Doyennette, et al.. Ridge polariton laser: different from a semiconductor edge-emitting laser. 2022. ⟨hal-03521600⟩



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