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Monolayer Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet

Abstract : The optical response of 2D materials and their heterostructures is the subject of intense research with advanced investigation of the luminescence properties in devices made of exfoliated flakes of few- down to one-monolayer thickness. Despite its prevalence in 2D materials research, hexagonal boron nitride (hBN) remains unexplored in this ultimate regime because of its ultrawide bandgap of about 6 eV and the technical difficulties related to performing microscopy in the deep-ultraviolet domain. Here, we report hyperspectral imaging at wavelengths around 200 nm in exfoliated hBN at low temperature. In monolayer boron nitride, we observe direct-gap emission around 6.1 eV. In marked contrast to transition metal dichalcogenides, the photoluminescence signal is intense in few-layer hBN, a result of the near unity radiative efficiency in indirect-gap multilayer hBN.
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https://hal.archives-ouvertes.fr/hal-03451945
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Submitted on : Friday, November 26, 2021 - 10:13:12 PM
Last modification on : Wednesday, June 1, 2022 - 4:40:00 AM
Long-term archiving on: : Sunday, February 27, 2022 - 8:26:59 PM

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Adrien Rousseau, Lei Ren, Alrik Durand, Pierre Valvin, Bernard Gil, et al.. Monolayer Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet. Nano Letters, American Chemical Society, 2021, 21, pp.10133. ⟨10.1021/acs.nanolett.1c02531⟩. ⟨hal-03451945⟩

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