Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density - Laboratoire Charles Coulomb (L2C) Accéder directement au contenu
Article Dans Une Revue AIP Advances Année : 2020

Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density

Guillaume Cassabois
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Alberto Zobelli
Jiahan Li
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J. Edgar
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Bernard Gil
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Résumé

we report the development of a scanning confocal microscope dedicated to photoluminescence in the 200 nm-wavelength range for samples at cryogenic temperatures (5-300K). We demonstrate the performances of our deep ultraviolet cryomicroscope in high- quality hexagonal boron nitride (hBN) crystals, although it can be utilized for biological studies in its range of operating wavelengths. From the mapping of the photoluminescence, we bring evidence for the suppression of extrinsic recombination channels in regions free from defects. The observation of emission spectra dominated by intrinsic recombination processes was never reported before in hBN, by means of photoluminescence spectroscopy. We show that photoluminescence tomography now competes with cathodoluminescence, and that deep ultraviolet cryomicroscopy by photoluminescence is a novel powerful tool in materials science applications, with the great advantage of an efficient non-invasive photo- excitation of carriers.
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Dates et versions

hal-02909124 , version 1 (29-09-2020)

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Pierre Valvin, Thomas Pelini, Guillaume Cassabois, Alberto Zobelli, Jiahan Li, et al.. Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density. AIP Advances, 2020, 10, pp.075025. ⟨10.1063/5.0013121⟩. ⟨hal-02909124⟩
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