Hot carrier solar cells are a concept of photovoltaic devices, which offers the opportunity to harvest solar energy beyond the Shockley-Queisser limit. Unlike conventional photovoltaic devices, hot carrier solar cells convert excess kinetic energy into useful electrical power rather than losing it through thermalisation mechanisms. To extract the carriers while they are still "hot", efficient energy-selective contacts must be developed. In previous studies, the presence of the hot carrier population in a p-i-n solar cell based on a single InGaAsP quantum well on InP substrate at room temperature has been demonstrated by means of complementary optical and electrical measurements, leading to an operating condition for this device beyond the limit for classical device operation. This result allows to design a new generation of devices to increase the hot carrier conversion contribution. In this work, we study InGaAs/AlInAs type II heterojunction as a selective contact for a future hot carrier solar cell device epitaxially grown on (001) oriented InP substrate. Two p-i-n solar cells have been grown by molecular beam epitaxy on InP. The absorber is a 50 nm-thick InGaAs layer surrounded by AlInAs barriers, all lattice-matched to InP. Two architectures are compared, the first with two symmetrical AlInAs barriers and the second with a single InGaAs quantum well in the center of the n-side barrier to allow electron tunneling across the barrier. Electrical characteristics under laser illumination with two different wavelengths have been measured to investigate the effect of the selective contact compared to the barrier. This preliminary study of InGaAs/AlInAs-based selective contacts show that such III-V combination is adapted for a future hot carrier solar cell in the InP technology.